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BSM120D12P2C005

LAPIS SemiconductorLAPIS Semiconductor
BSM120D12P2C005 Image
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Product Overview

Part Number: BSM120D12P2C005
Manufacturer/Brand: LAPIS Semiconductor
Product description MOSFET 2N-CH 1200V 120A MODULE
Datasheets: 1.BSM120D12P2C005.pdf2.BSM120D12P2C005.pdf3.BSM120D12P2C005.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 214 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 214 pcs
Reference Price (In US Dollars)
1 pcs
$141.267
10 pcs
$134.447
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Specifications of BSM120D12P2C005

Part Number BSM120D12P2C005 Manufacturer LAPIS Semiconductor
Description MOSFET 2N-CH 1200V 120A MODULE Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 214 pcs Data sheet 1.BSM120D12P2C005.pdf2.BSM120D12P2C005.pdf3.BSM120D12P2C005.pdf
Vgs(th) (Max) @ Id 2.7V @ 22mA Supplier Device Package Module
Series - Rds On (Max) @ Id, Vgs -
Power - Max 780W Packaging Bulk
Package / Case Module Operating Temperature -40°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 32 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs - FET Type 2 N-Channel (Half Bridge)
FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV)
Detailed Description Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 120A (Tc) 780W Module Current - Continuous Drain (Id) @ 25°C 120A (Tc)

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