SPB02N60C3ATMA1

International Rectifier (Infineon Technologies)

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Product Overview

Part Number:	SPB02N60C3ATMA1
Manufacturer/Brand:	International Rectifier (Infineon Technologies)
Product description	MOSFET N-CH 650V 1.8A D2PAK
Datasheets:	SPB02N60C3ATMA1.pdf
RoHs Status	Contains lead / RoHS non-compliant
Stock Condition	2737 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 2737 pcs

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Specifications of SPB02N60C3ATMA1

Part Number	SPB02N60C3ATMA1	Manufacturer	International Rectifier (Infineon Technologies)
Description	MOSFET N-CH 650V 1.8A D2PAK	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	2737 pcs	Data sheet	SPB02N60C3ATMA1.pdf
Vgs(th) (Max) @ Id	3.9V @ 80µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	PG-TO263-3-2
Series	CoolMOS™	Rds On (Max) @ Id, Vgs	3 Ohm @ 1.1A, 10V
Power Dissipation (Max)	25W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Other Names	SP000013516 SPB02N60C3 SPB02N60C3ATMA1TR SPB02N60C3INTR SPB02N60C3INTR-ND SPB02N60C3XT SPB02N60C3XT-ND
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 25V	Gate Charge (Qg) (Max) @ Vgs	12.5nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	650V
Detailed Description	N-Channel 650V 1.8A (Tc) 25W (Tc) Surface Mount PG-TO263-3-2	Current - Continuous Drain (Id) @ 25°C	1.8A (Tc)

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