Part Number | IDH08G65C5XKSA1 | Manufacturer | Infineon Technologies |
---|---|---|---|
Description | DIODE SCHOTTKY 650V 8A TO220-2 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 22329 pcs | Data sheet | IDH08G65C5XKSA1.pdf |
Voltage - Peak Reverse (Max) | Silicon Carbide Schottky | Voltage - Forward (Vf) (Max) @ If | 8A (DC) |
Voltage - Breakdown | PG-TO220-2 | Series | thinQ!™ |
RoHS Status | Tube | Reverse Recovery Time (trr) | No Recovery Time > 500mA (Io) |
Resistance @ If, F | 250pF @ 1V, 1MHz | Polarization | TO-220-2 |
Other Names | IDH08G65C5 IDH08G65C5-ND SP000925204 |
Operating Temperature - Junction | 0ns |
Mounting Type | Through Hole | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Part Number | IDH08G65C5XKSA1 | Expanded Description | Diode Silicon Carbide Schottky 650V 8A (DC) Through Hole PG-TO220-2 |
Diode Configuration | 280µA @ 650V | Description | DIODE SCHOTTKY 650V 8A TO220-2 |
Current - Reverse Leakage @ Vr | 1.7V @ 8A | Current - Average Rectified (Io) (per Diode) | 650V |
Capacitance @ Vr, F | -55°C ~ 175°C |
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