Part Number | SI8429DB-T1-E1 | Manufacturer | Electro-Films (EFI) / Vishay |
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Description | MOSFET P-CH 8V 11.7A 2X2 4-MFP | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 198451 pcs | Data sheet | SI8429DB-T1-E1.pdf |
Vgs(th) (Max) @ Id | 800mV @ 250µA | Vgs (Max) | ±5V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | 4-Microfoot |
Series | TrenchFET® | Rds On (Max) @ Id, Vgs | 35 mOhm @ 1A, 4.5V |
Power Dissipation (Max) | 2.77W (Ta), 6.25W (Tc) | Packaging | Tape & Reel (TR) |
Package / Case | 4-XFBGA, CSPBGA | Other Names | SI8429DB-T1-E1TR SI8429DBT1E1 |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 33 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 1640pF @ 4V |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 5V | FET Type | P-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Drain to Source Voltage (Vdss) | 8V | Detailed Description | P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot |
Current - Continuous Drain (Id) @ 25°C | 11.7A (Tc) |
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