SI5511DC-T1-GE3

Electro-Films (EFI) / Vishay

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Product Overview

Part Number:	SI5511DC-T1-GE3
Manufacturer/Brand:	Electro-Films (EFI) / Vishay
Product description	MOSFET N/P-CH 30V 4A 1206-8
Datasheets:	SI5511DC-T1-GE3.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	6531 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 6531 pcs

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Specifications of SI5511DC-T1-GE3

Part Number	SI5511DC-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 30V 4A 1206-8	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	6531 pcs	Data sheet	SI5511DC-T1-GE3.pdf
Vgs(th) (Max) @ Id	2V @ 250µA	Supplier Device Package	1206-8 ChipFET™
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	55 mOhm @ 4.8A, 4.5V
Power - Max	3.1W, 2.6W	Packaging	Tape & Reel (TR)
Package / Case	8-SMD, Flat Lead	Other Names	SI5511DC-T1-GE3TR
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	435pF @ 15V	Gate Charge (Qg) (Max) @ Vgs	7.1nC @ 5V
FET Type	N and P-Channel	FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V	Detailed Description	Mosfet Array N and P-Channel 30V 4A, 3.6A 3.1W, 2.6W Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C	4A, 3.6A	Base Part Number	SI5511

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SI5511DC-T1-GE3

Product Overview

Specifications of SI5511DC-T1-GE3

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