SI5440DC-T1-GE3

Electro-Films (EFI) / Vishay

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Product Overview

Part Number:	SI5440DC-T1-GE3
Manufacturer/Brand:	Electro-Films (EFI) / Vishay
Product description	MOSFET N-CH 30V 6A 1206-8
Datasheets:	SI5440DC-T1-GE3.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	351859 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 351859 pcs

Reference Price (In US Dollars)

3000 pcs: $0.085

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Specifications of SI5440DC-T1-GE3

Part Number	SI5440DC-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 30V 6A 1206-8	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	351859 pcs	Data sheet	SI5440DC-T1-GE3.pdf
Vgs(th) (Max) @ Id	2.5V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	1206-8 ChipFET™
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	19 mOhm @ 9.1A, 10V
Power Dissipation (Max)	2.5W (Ta), 6.3W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	8-SMD, Flat Lead	Other Names	SI5440DC-T1-GE3TR SI5440DCT1GE3
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 10V	Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Drain to Source Voltage (Vdss)	30V
Detailed Description	N-Channel 30V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™	Current - Continuous Drain (Id) @ 25°C	6A (Tc)

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SI5440DC-T1-GE3

Product Overview

Reference Price (In US Dollars)

Specifications of SI5440DC-T1-GE3

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AFTER-SALES GUARANTEE

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