Part Number | SI4210DY-T1-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
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Description | MOSFET 2N-CH 30V 6.5A 8-SOIC | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 324674 pcs | Data sheet | SI4210DY-T1-GE3.pdf |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | Supplier Device Package | 8-SO |
Series | TrenchFET® | Rds On (Max) @ Id, Vgs | 35.5 mOhm @ 5A, 10V |
Power - Max | 2.7W | Packaging | Tape & Reel (TR) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | Other Names | SI4210DY-T1-GE3-ND SI4210DY-T1-GE3TR SI4210DYT1GE3 |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 445pF @ 15V | Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
FET Type | 2 N-Channel (Dual) | FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V | Detailed Description | Mosfet Array 2 N-Channel (Dual) 30V 6.5A 2.7W Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25°C | 6.5A | Base Part Number | SI4210 |
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