SI3529DV-T1-GE3

Electro-Films (EFI) / Vishay

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Product Overview

Part Number:	SI3529DV-T1-GE3
Manufacturer/Brand:	Electro-Films (EFI) / Vishay
Product description	MOSFET N/P-CH 40V 2.5A 6-TSOP
Datasheets:	SI3529DV-T1-GE3.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	3360 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 3360 pcs

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Specifications of SI3529DV-T1-GE3

Part Number	SI3529DV-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N/P-CH 40V 2.5A 6-TSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	3360 pcs	Data sheet	SI3529DV-T1-GE3.pdf
Vgs(th) (Max) @ Id	3V @ 250µA	Supplier Device Package	6-TSOP
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	125 mOhm @ 2.2A, 10V
Power - Max	1.4W	Packaging	Tape & Reel (TR)
Package / Case	SOT-23-6 Thin, TSOT-23-6	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	205pF @ 20V
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V	FET Type	N and P-Channel
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	40V
Detailed Description	Mosfet Array N and P-Channel 40V 2.5A, 1.95A 1.4W Surface Mount 6-TSOP	Current - Continuous Drain (Id) @ 25°C	2.5A, 1.95A

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SI3529DV-T1-GE3

Product Overview

Specifications of SI3529DV-T1-GE3

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