SI3493BDV-T1-GE3

Electro-Films (EFI) / Vishay

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Product Overview

Part Number:	SI3493BDV-T1-GE3
Manufacturer/Brand:	Electro-Films (EFI) / Vishay
Product description	MOSFET P-CH 20V 8A 6-TSOP
Datasheets:	SI3493BDV-T1-GE3.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	104825 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 104825 pcs

Reference Price (In US Dollars)

1 pcs: $0.329

10 pcs: $0.288

100 pcs: $0.222

500 pcs: $0.164

1000 pcs: $0.132

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Specifications of SI3493BDV-T1-GE3

Part Number	SI3493BDV-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 20V 8A 6-TSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	104825 pcs	Data sheet	SI3493BDV-T1-GE3.pdf
Vgs(th) (Max) @ Id	900mV @ 250µA	Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	6-TSOP
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	27.5 mOhm @ 7A, 4.5V
Power Dissipation (Max)	2.08W (Ta), 2.97W (Tc)	Packaging	Cut Tape (CT)
Package / Case	SOT-23-6 Thin, TSOT-23-6	Other Names	SI3493BDV-T1-GE3CT
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	1805pF @ 10V	Gate Charge (Qg) (Max) @ Vgs	43.5nC @ 5V
FET Type	P-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V	Drain to Source Voltage (Vdss)	20V
Detailed Description	P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP	Current - Continuous Drain (Id) @ 25°C	8A (Tc)

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SI3493BDV-T1-GE3

Product Overview

Reference Price (In US Dollars)

Specifications of SI3493BDV-T1-GE3

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AFTER-SALES GUARANTEE

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