SI3429EDV-T1-GE3

Electro-Films (EFI) / Vishay

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Product Overview

Part Number:	SI3429EDV-T1-GE3
Manufacturer/Brand:	Electro-Films (EFI) / Vishay
Product description	MOSFET P-CHAN 20V TSOP6S
Datasheets:	SI3429EDV-T1-GE3.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	616036 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 616036 pcs

Reference Price (In US Dollars)

3000 pcs: $0.053

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Specifications of SI3429EDV-T1-GE3

Part Number	SI3429EDV-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CHAN 20V TSOP6S	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	616036 pcs	Data sheet	SI3429EDV-T1-GE3.pdf
Vgs(th) (Max) @ Id	1V @ 250µA	Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	6-TSOP
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	21 mOhm @ 4A, 10V
Power Dissipation (Max)	4.2W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	SOT-23-6 Thin, TSOT-23-6	Other Names	SI3429EDV-T1-GE3TR
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	4085pF @ 50V	Gate Charge (Qg) (Max) @ Vgs	118nC @ 10V
FET Type	P-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V	Drain to Source Voltage (Vdss)	20V
Detailed Description	P-Channel 20V 8A (Ta), 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP	Current - Continuous Drain (Id) @ 25°C	8A (Ta), 8A (Tc)

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SI3429EDV-T1-GE3

Product Overview

Reference Price (In US Dollars)

Specifications of SI3429EDV-T1-GE3

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AFTER-SALES GUARANTEE

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