SI3410DV-T1-GE3

Electro-Films (EFI) / Vishay

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Product Overview

Part Number:	SI3410DV-T1-GE3
Manufacturer/Brand:	Electro-Films (EFI) / Vishay
Product description	MOSFET N-CH 30V 8A 6-TSOP
Datasheets:	SI3410DV-T1-GE3.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	254275 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 254275 pcs

Reference Price (In US Dollars)

3000 pcs: $0.126

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Specifications of SI3410DV-T1-GE3

Part Number	SI3410DV-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 30V 8A 6-TSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	254275 pcs	Data sheet	SI3410DV-T1-GE3.pdf
Vgs(th) (Max) @ Id	3V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	6-TSOP
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	19.5 mOhm @ 5A, 10V
Power Dissipation (Max)	2W (Ta), 4.1W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	SOT-23-6 Thin, TSOT-23-6	Other Names	SI3410DV-T1-GE3TR SI3410DVT1GE3
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	1295pF @ 15V	Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Drain to Source Voltage (Vdss)	30V
Detailed Description	N-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP	Current - Continuous Drain (Id) @ 25°C	8A (Tc)

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SI3410DV-T1-GE3

Product Overview

Reference Price (In US Dollars)

Specifications of SI3410DV-T1-GE3

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AFTER-SALES GUARANTEE

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