SI2331DS-T1-E3

Electro-Films (EFI) / Vishay

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Product Overview

Part Number:	SI2331DS-T1-E3
Manufacturer/Brand:	Electro-Films (EFI) / Vishay
Product description	MOSFET P-CH 12V 3.2A SOT23-3
Datasheets:	SI2331DS-T1-E3.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	2968 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 2968 pcs

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Specifications of SI2331DS-T1-E3

Part Number	SI2331DS-T1-E3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 12V 3.2A SOT23-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	2968 pcs	Data sheet	SI2331DS-T1-E3.pdf
Vgs(th) (Max) @ Id	900mV @ 250µA	Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	SOT-23-3 (TO-236)
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	48 mOhm @ 3.6A, 4.5V
Power Dissipation (Max)	710mW (Ta)	Packaging	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23-3	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	780pF @ 6V
Gate Charge (Qg) (Max) @ Vgs	14nC @ 4.5V	FET Type	P-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Drain to Source Voltage (Vdss)	12V	Detailed Description	P-Channel 12V 3.2A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C	3.2A (Ta)

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SI2331DS-T1-E3

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Specifications of SI2331DS-T1-E3

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