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SI2319DS-T1-GE3

Electro-Films (EFI) / VishayElectro-Films (EFI) / Vishay
Electro-Films (EFI) / Vishay
Image may be representation. See specifications for product details.

Product Overview

Part Number: SI2319DS-T1-GE3
Manufacturer/Brand: Electro-Films (EFI) / Vishay
Product description MOSFET P-CH 40V 2.3A SOT23-3
Datasheets: SI2319DS-T1-GE3.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 121409 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 121409 pcs
Reference Price (In US Dollars)
1 pcs
$0.325
10 pcs
$0.285
100 pcs
$0.219
500 pcs
$0.163
1000 pcs
$0.13
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Specifications of SI2319DS-T1-GE3

Part Number SI2319DS-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 40V 2.3A SOT23-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 121409 pcs Data sheet SI2319DS-T1-GE3.pdf
Vgs(th) (Max) @ Id 3V @ 250µA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Series TrenchFET®
Rds On (Max) @ Id, Vgs 82 mOhm @ 3A, 10V Power Dissipation (Max) 750mW (Ta)
Packaging Cut Tape (CT) Package / Case TO-236-3, SC-59, SOT-23-3
Other Names SI2319DS-T1-GE3CT Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 33 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 20V Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
FET Type P-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 40V
Detailed Description P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)

Shipment

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FEDEX www.FedEx.com From $35.00 basic shipping fee depend on zone and country.
DHL www.DHL.com From $35.00 basic shipping fee depend on zone and country.
UPS www.UPS.com From $35.00 basic shipping fee depend on zone and country.
TNT www.TNT.com From $35.00 basic shipping fee depend on zone and country.

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