SI2312BDS-T1-E3

Electro-Films (EFI) / Vishay

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Product Overview

Part Number:	SI2312BDS-T1-E3
Manufacturer/Brand:	Electro-Films (EFI) / Vishay
Product description	MOSFET N-CH 20V 3.9A SOT23-3
Datasheets:	SI2312BDS-T1-E3.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	576045 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 576045 pcs

Reference Price (In US Dollars)

3000 pcs: $0.063

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Specifications of SI2312BDS-T1-E3

Part Number	SI2312BDS-T1-E3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 20V 3.9A SOT23-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	576045 pcs	Data sheet	SI2312BDS-T1-E3.pdf
Vgs(th) (Max) @ Id	850mV @ 250µA	Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	SOT-23-3 (TO-236)
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	31 mOhm @ 5A, 4.5V
Power Dissipation (Max)	750mW (Ta)	Packaging	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23-3	Other Names	SI2312BDS-T1-E3TR SI2312BDST1E3
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	33 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V	Drain to Source Voltage (Vdss)	20V
Detailed Description	N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)	Current - Continuous Drain (Id) @ 25°C	3.9A (Ta)

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SI2312BDS-T1-E3

Product Overview

Reference Price (In US Dollars)

Specifications of SI2312BDS-T1-E3

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AFTER-SALES GUARANTEE

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