Part Number | HTMN5130SSD-13 | Manufacturer | Diodes Incorporated |
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Description | MOSFET 2N-CH 55V 2.6A 8SOIC | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 95127 pcs | Data sheet | HTMN5130SSD-13.pdf |
Vgs(th) (Max) @ Id | 3V @ 250µA | Supplier Device Package | 8-SO |
Series | - | Rds On (Max) @ Id, Vgs | 130 mOhm @ 3A, 10V |
Power - Max | 1.7W | Packaging | Tape & Reel (TR) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | Other Names | HTMN5130SSD-13DI HTMN5130SSD-13DI-ND HTMN5130SSD-13DITR |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 32 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 218.7pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 8.9nC @ 10V | FET Type | 2 N-Channel (Dual) |
FET Feature | Standard | Drain to Source Voltage (Vdss) | 55V |
Detailed Description | Mosfet Array 2 N-Channel (Dual) 55V 2.6A 1.7W Surface Mount 8-SO | Current - Continuous Drain (Id) @ 25°C | 2.6A |
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