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NVD5867NLT4G

AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
AMI Semiconductor / ON Semiconductor
Image may be representation. See specifications for product details.

Product Overview

Part Number: NVD5867NLT4G
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET N-CH 60V DPAK
Datasheets: NVD5867NLT4G.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 5163 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 5163 pcs
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Specifications of NVD5867NLT4G

Part Number NVD5867NLT4G Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 60V DPAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5163 pcs Data sheet NVD5867NLT4G.pdf
Vgs(th) (Max) @ Id 2.5V @ 250µA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package DPAK
Series Automotive, AEC-Q101 Rds On (Max) @ Id, Vgs 39 mOhm @ 11A, 10V
Power Dissipation (Max) 3.3W (Ta), 43W (Tc) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Drain to Source Voltage (Vdss) 60V
Detailed Description N-Channel 60V 6A (Ta), 22A (Tc) 3.3W (Ta), 43W (Tc) Surface Mount DPAK Current - Continuous Drain (Id) @ 25°C 6A (Ta), 22A (Tc)

Shipment

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