NTMSD6N303R2G

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	NTMSD6N303R2G
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 30V 6A 8-SOIC
Datasheets:	NTMSD6N303R2G.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	5789 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 5789 pcs

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Specifications of NTMSD6N303R2G

Part Number	NTMSD6N303R2G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 30V 6A 8-SOIC	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5789 pcs	Data sheet	NTMSD6N303R2G.pdf
Vgs(th) (Max) @ Id	2.5V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	8-SOIC
Series	FETKY™	Rds On (Max) @ Id, Vgs	32 mOhm @ 6A, 10V
Power Dissipation (Max)	2W (Ta)	Packaging	Tape & Reel (TR)
Package / Case	8-SOIC (0.154", 3.90mm Width)	Other Names	NTMSD6N303R2GOS
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	3 (168 Hours)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	950pF @ 24V	Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
FET Type	N-Channel	FET Feature	Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Drain to Source Voltage (Vdss)	30V
Detailed Description	N-Channel 30V 6A (Ta) 2W (Ta) Surface Mount 8-SOIC	Current - Continuous Drain (Id) @ 25°C	6A (Ta)

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NTMSD6N303R2G

Product Overview

Specifications of NTMSD6N303R2G

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