NTMS4N01R2G

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	NTMS4N01R2G
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 20V 3.3A 8-SOIC
Datasheets:	NTMS4N01R2G.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	359057 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 359057 pcs

Reference Price (In US Dollars)

2500 pcs: $0.108

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Specifications of NTMS4N01R2G

Part Number	NTMS4N01R2G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 20V 3.3A 8-SOIC	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	359057 pcs	Data sheet	NTMS4N01R2G.pdf
Vgs(th) (Max) @ Id	1.2V @ 250µA	Vgs (Max)	±10V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	8-SOIC
Series	-	Rds On (Max) @ Id, Vgs	40 mOhm @ 4.2A, 4.5V
Power Dissipation (Max)	770mW (Ta)	Packaging	Tape & Reel (TR)
Package / Case	8-SOIC (0.154", 3.90mm Width)	Other Names	NTMS4N01R2GOS
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 10V	Gate Charge (Qg) (Max) @ Vgs	16nC @ 4.5V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V	Drain to Source Voltage (Vdss)	20V
Detailed Description	N-Channel 20V 3.3A (Ta) 770mW (Ta) Surface Mount 8-SOIC	Current - Continuous Drain (Id) @ 25°C	3.3A (Ta)

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NTMS4N01R2G

Product Overview

Reference Price (In US Dollars)

Specifications of NTMS4N01R2G

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