NTD4909N-1G

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	NTD4909N-1G
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 30V 41A SGL IPAK
Datasheets:	NTD4909N-1G.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	6983 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 6983 pcs

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Specifications of NTD4909N-1G

Part Number	NTD4909N-1G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 30V 41A SGL IPAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	6983 pcs	Data sheet	NTD4909N-1G.pdf
Vgs(th) (Max) @ Id	2.2V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	I-PAK
Series	-	Rds On (Max) @ Id, Vgs	8 mOhm @ 30A, 10V
Power Dissipation (Max)	1.37W (Ta), 29.4W (Tc)	Packaging	Tube
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	1314pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	17.5nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Drain to Source Voltage (Vdss)	30V	Detailed Description	N-Channel 30V 8.8A (Ta), 41A (Tc) 1.37W (Ta), 29.4W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C	8.8A (Ta), 41A (Tc)

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NTD4909N-1G

Product Overview

Specifications of NTD4909N-1G

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