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NTD18N06-001

AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
AMI Semiconductor / ON Semiconductor
Image may be representation. See specifications for product details.

Product Overview

Part Number: NTD18N06-001
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET N-CH 60V 18A IPAK
Datasheets: NTD18N06-001.pdf
RoHs Status Contains lead / RoHS non-compliant
Stock Condition 5215 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 5215 pcs
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Specifications of NTD18N06-001

Part Number NTD18N06-001 Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 60V 18A IPAK Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 5215 pcs Data sheet NTD18N06-001.pdf
Vgs(th) (Max) @ Id 4V @ 250µA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package I-PAK
Series - Rds On (Max) @ Id, Vgs 60 mOhm @ 9A, 10V
Power Dissipation (Max) 2.1W (Ta), 55W (Tj) Packaging Tube
Package / Case TO-251-3 Short Leads, IPak, TO-251AA Other Names NTD18N06-001OS
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 60V
Detailed Description N-Channel 60V 18A (Ta) 2.1W (Ta), 55W (Tj) Through Hole I-PAK Current - Continuous Drain (Id) @ 25°C 18A (Ta)

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