NSBC115EPDXV6T1G

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	NSBC115EPDXV6T1G
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	SS SOT563 RSTR XSTR TR
Datasheets:	NSBC115EPDXV6T1G.pdf
Stock Condition	1231517 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 1231517 pcs

Reference Price (In US Dollars)

8000 pcs: $0.027

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Specifications of NSBC115EPDXV6T1G

Part Number	NSBC115EPDXV6T1G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	SS SOT563 RSTR XSTR TR	Lead Free Status / RoHS Status
Quantity Available	1231517 pcs	Data sheet	NSBC115EPDXV6T1G.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	Supplier Device Package	SOT-563
Series	Automotive, AEC-Q101	Resistor - Emitter Base (R2)	100 kOhms
Resistor - Base (R1)	100 kOhms	Power - Max	357mW
Package / Case	SOT-563, SOT-666	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	52 Weeks
Frequency - Transition	-	Detailed Description	Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 357mW Surface Mount SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA

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NSBC115EPDXV6T1G

Product Overview

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Specifications of NSBC115EPDXV6T1G

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