NJVMJD112T4G

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	NJVMJD112T4G
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	TRANS NPN DARL 100V 2A DPAK
Datasheets:	NJVMJD112T4G.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	329224 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 329224 pcs

Reference Price (In US Dollars)

2500 pcs: $0.115

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Specifications of NJVMJD112T4G

Part Number	NJVMJD112T4G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 100V 2A DPAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	329224 pcs	Data sheet	NJVMJD112T4G.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A
Transistor Type	NPN - Darlington	Supplier Device Package	DPAK
Series	-	Power - Max	20W
Packaging	Tape & Reel (TR)	Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature	-65°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	7 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	25MHz
Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 20W Surface Mount DPAK	DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V
Current - Collector Cutoff (Max)	20µA	Current - Collector (Ic) (Max)	2A
Base Part Number	MJD112

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NJVMJD112T4G

Product Overview

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Specifications of NJVMJD112T4G

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