MJ11012G

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	MJ11012G
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	TRANS NPN DARL 60V 30A TO-3
Datasheets:	MJ11012G.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	19366 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 19366 pcs

Reference Price (In US Dollars)

1 pcs: $1.564

10 pcs: $1.404

100 pcs: $1.15

500 pcs: $0.979

1000 pcs: $0.826

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Total:$1.564

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Specifications of MJ11012G

Part Number	MJ11012G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 60V 30A TO-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	19366 pcs	Data sheet	MJ11012G.pdf
Voltage - Collector Emitter Breakdown (Max)	60V	Vce Saturation (Max) @ Ib, Ic	4V @ 300mA, 30A
Transistor Type	NPN - Darlington	Supplier Device Package	TO-204 (TO-3)
Series	-	Power - Max	200W
Packaging	Tray	Package / Case	TO-204AA, TO-3
Other Names	MJ11012G-ND MJ11012GOS	Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	2 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	4MHz	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 60V 30A 4MHz 200W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 20A, 5V	Current - Collector Cutoff (Max)	1mA
Current - Collector (Ic) (Max)	30A

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MJ11012G

Product Overview

Reference Price (In US Dollars)

Specifications of MJ11012G

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AFTER-SALES GUARANTEE

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