IRLW610ATM

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	IRLW610ATM
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 200V 3.3A I2PAK
Datasheets:	IRLW610ATM.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	5332 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 5332 pcs

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Specifications of IRLW610ATM

Part Number	IRLW610ATM	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 200V 3.3A I2PAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5332 pcs	Data sheet	IRLW610ATM.pdf
Vgs(th) (Max) @ Id	2V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	I2PAK (TO-262)
Series	-	Rds On (Max) @ Id, Vgs	1.5 Ohm @ 1.65A, 5V
Power Dissipation (Max)	3.1W (Ta), 33W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	240pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	9nC @ 5V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	5V
Drain to Source Voltage (Vdss)	200V	Detailed Description	N-Channel 200V 3.3A (Tc) 3.1W (Ta), 33W (Tc) Through Hole I2PAK (TO-262)
Current - Continuous Drain (Id) @ 25°C	3.3A (Tc)

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IRLW610ATM

Product Overview

Specifications of IRLW610ATM

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