Part Number | IRFW630BTM-FP001 | Manufacturer | AMI Semiconductor / ON Semiconductor |
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Description | MOSFET N-CH 200V 9A D2PAK | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 141143 pcs | Data sheet | IRFW630BTM-FP001.pdf |
Vgs(th) (Max) @ Id | 4V @ 250µA | Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | D²PAK (TO-263AB) |
Series | - | Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 10V |
Power Dissipation (Max) | 3.13W (Ta), 72W (Tc) | Packaging | Tape & Reel (TR) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Other Names | IRFW630BTM_FP001 IRFW630BTM_FP001-ND |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 25V | Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
FET Type | N-Channel | FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Drain to Source Voltage (Vdss) | 200V |
Detailed Description | N-Channel 200V 9A (Tc) 3.13W (Ta), 72W (Tc) Surface Mount D²PAK (TO-263AB) | Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
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