HUFA76609D3ST

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	HUFA76609D3ST
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 100V 10A DPAK
Datasheets:	HUFA76609D3ST.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	5579 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 5579 pcs

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Specifications of HUFA76609D3ST

Part Number	HUFA76609D3ST	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 100V 10A DPAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5579 pcs	Data sheet	HUFA76609D3ST.pdf
Vgs(th) (Max) @ Id	3V @ 250µA	Vgs (Max)	±16V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-252AA
Series	UltraFET™	Rds On (Max) @ Id, Vgs	160 mOhm @ 10A, 10V
Power Dissipation (Max)	49W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	Other Names	HUFA76609D3ST-ND HUFA76609D3STTR
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	425pF @ 25V	Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Drain to Source Voltage (Vdss)	100V
Detailed Description	N-Channel 100V 10A (Tc) 49W (Tc) Surface Mount TO-252AA	Current - Continuous Drain (Id) @ 25°C	10A (Tc)

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HUFA76609D3ST

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