Part Number | HUF76639S3ST-F085 | Manufacturer | AMI Semiconductor / ON Semiconductor |
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Description | MOSFET N CH 100V 51A TO-263AB | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 31925 pcs | Data sheet | HUF76639S3ST-F085.pdf |
Vgs(th) (Max) @ Id | 3V @ 250µA | Vgs (Max) | ±16V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | D²PAK (TO-263AB) |
Series | UltraFET™ | Rds On (Max) @ Id, Vgs | 26 mOhm @ 51A, 10V |
Power Dissipation (Max) | 180W (Tc) | Packaging | Original-Reel® |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Other Names | HUF76639S3ST-F085DKR HUF76639S3ST_F085DKR HUF76639S3ST_F085DKR-ND |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 25V | Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
FET Type | N-Channel | FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Drain to Source Voltage (Vdss) | 100V |
Detailed Description | N-Channel 100V 51A (Tc) 180W (Tc) Surface Mount D²PAK (TO-263AB) | Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
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