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HUF76639S3ST-F085

AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
HUF76639S3ST-F085 Image
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Product Overview

Part Number: HUF76639S3ST-F085
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET N CH 100V 51A TO-263AB
Datasheets: HUF76639S3ST-F085.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 31925 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 31925 pcs
Reference Price (In US Dollars)
1 pcs
$1.098
10 pcs
$0.993
100 pcs
$0.798
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Specifications of HUF76639S3ST-F085

Part Number HUF76639S3ST-F085 Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N CH 100V 51A TO-263AB Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 31925 pcs Data sheet HUF76639S3ST-F085.pdf
Vgs(th) (Max) @ Id 3V @ 250µA Vgs (Max) ±16V
Technology MOSFET (Metal Oxide) Supplier Device Package D²PAK (TO-263AB)
Series UltraFET™ Rds On (Max) @ Id, Vgs 26 mOhm @ 51A, 10V
Power Dissipation (Max) 180W (Tc) Packaging Original-Reel®
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Other Names HUF76639S3ST-F085DKR
HUF76639S3ST_F085DKR
HUF76639S3ST_F085DKR-ND
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 100V
Detailed Description N-Channel 100V 51A (Tc) 180W (Tc) Surface Mount D²PAK (TO-263AB) Current - Continuous Drain (Id) @ 25°C 51A (Tc)

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UPS www.UPS.com From $35.00 basic shipping fee depend on zone and country.
TNT www.TNT.com From $35.00 basic shipping fee depend on zone and country.

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