HUF75639G3

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	HUF75639G3
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 100V 56A TO-247
Datasheets:	HUF75639G3.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	29401 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 29401 pcs

Reference Price (In US Dollars)

1 pcs: $1.239

10 pcs: $1.118

450 pcs: $0.799

900 pcs: $0.631

1350 pcs: $0.579

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Total:$1.239

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Specifications of HUF75639G3

Part Number	HUF75639G3	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 100V 56A TO-247	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	29401 pcs	Data sheet	HUF75639G3.pdf
Vgs(th) (Max) @ Id	4V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-247
Series	UltraFET™	Rds On (Max) @ Id, Vgs	25 mOhm @ 56A, 10V
Power Dissipation (Max)	200W (Tc)	Packaging	Tube
Package / Case	TO-247-3	Other Names	HUF75639G3-ND HUF75639G3FS
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 25V	Gate Charge (Qg) (Max) @ Vgs	130nC @ 20V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	100V
Detailed Description	N-Channel 100V 56A (Tc) 200W (Tc) Through Hole TO-247	Current - Continuous Drain (Id) @ 25°C	56A (Tc)

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HUF75639G3

Product Overview

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Specifications of HUF75639G3

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