FQU3N60TU

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FQU3N60TU
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 600V 2.4A IPAK
Datasheets:	1.FQU3N60TU.pdf 2.FQU3N60TU.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	6916 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 6916 pcs

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Specifications of FQU3N60TU

Part Number	FQU3N60TU	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 600V 2.4A IPAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	6916 pcs	Data sheet	1.FQU3N60TU.pdf 2.FQU3N60TU.pdf
Vgs(th) (Max) @ Id	5V @ 250µA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	I-PAK
Series	QFET®	Rds On (Max) @ Id, Vgs	3.6 Ohm @ 1.2A, 10V
Power Dissipation (Max)	2.5W (Ta), 50W (Tc)	Packaging	Tube
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	600V	Detailed Description	N-Channel 600V 2.4A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C	2.4A (Tc)

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FQU3N60TU

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