FQP8N80C

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FQP8N80C
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 800V 8A TO-220
Datasheets:	1.FQP8N80C.pdf 2.FQP8N80C.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	42864 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 42864 pcs

Reference Price (In US Dollars)

1 pcs: $0.889

10 pcs: $0.802

100 pcs: $0.644

500 pcs: $0.501

1000 pcs: $0.415

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Total:$0.889

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Specifications of FQP8N80C

Part Number	FQP8N80C	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 800V 8A TO-220	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	42864 pcs	Data sheet	1.FQP8N80C.pdf 2.FQP8N80C.pdf
Vgs(th) (Max) @ Id	5V @ 250µA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-220AB
Series	QFET®	Rds On (Max) @ Id, Vgs	1.55 Ohm @ 4A, 10V
Power Dissipation (Max)	178W (Tc)	Packaging	Tube
Package / Case	TO-220-3	Other Names	FQP8N80C-ND FQP8N80CFS
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	35 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	2050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	800V	Detailed Description	N-Channel 800V 8A (Tc) 178W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25°C	8A (Tc)

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FQP8N80C

Product Overview

Reference Price (In US Dollars)

Specifications of FQP8N80C

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