FQP6N80C

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FQP6N80C
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 800V 5.5A TO-220
Datasheets:	1.FQP6N80C.pdf 2.FQP6N80C.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	51117 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 51117 pcs

Reference Price (In US Dollars)

1 pcs: $0.697

10 pcs: $0.63

100 pcs: $0.506

500 pcs: $0.393

1000 pcs: $0.326

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Specifications of FQP6N80C

Part Number	FQP6N80C	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 800V 5.5A TO-220	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	51117 pcs	Data sheet	1.FQP6N80C.pdf 2.FQP6N80C.pdf
Vgs(th) (Max) @ Id	5V @ 250µA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-220-3
Series	QFET®	Rds On (Max) @ Id, Vgs	2.5 Ohm @ 2.75A, 10V
Power Dissipation (Max)	158W (Tc)	Packaging	Tube
Package / Case	TO-220-3	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	27 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	1310pF @ 25V	Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	800V
Detailed Description	N-Channel 800V 5.5A (Tc) 158W (Tc) Through Hole TO-220-3	Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)

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FQP6N80C

Product Overview

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Specifications of FQP6N80C

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