Part Number | FQN1N60CTA | Manufacturer | AMI Semiconductor / ON Semiconductor |
---|---|---|---|
Description | MOSFET N-CH 600V 300MA TO-92 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 559613 pcs | Data sheet | FQN1N60CTA.pdf |
Vgs(th) (Max) @ Id | 4V @ 250µA | Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | TO-92-3 |
Series | QFET® | Rds On (Max) @ Id, Vgs | 11.5 Ohm @ 150mA, 10V |
Power Dissipation (Max) | 1W (Ta), 3W (Tc) | Packaging | Tape & Box (TB) |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | Other Names | FQN1N60CTA-ND FQN1N60CTATB |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 14 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 170pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 10V | FET Type | N-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V | Detailed Description | N-Channel 600V 300mA (Tc) 1W (Ta), 3W (Tc) Through Hole TO-92-3 |
Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) |
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