FQI4N25TU

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FQI4N25TU
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 250V 3.6A I2PAK
Datasheets:	FQI4N25TU.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	4308 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 4308 pcs

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Specifications of FQI4N25TU

Part Number	FQI4N25TU	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 250V 3.6A I2PAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4308 pcs	Data sheet	FQI4N25TU.pdf
Vgs(th) (Max) @ Id	5V @ 250µA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	I2PAK (TO-262)
Series	QFET®	Rds On (Max) @ Id, Vgs	1.75 Ohm @ 1.8A, 10V
Power Dissipation (Max)	3.13W (Ta), 52W (Tc)	Packaging	Tube
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	5.6nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	250V	Detailed Description	N-Channel 250V 3.6A (Tc) 3.13W (Ta), 52W (Tc) Through Hole I2PAK (TO-262)
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)

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FQI4N25TU

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