Part Number | FQI27N25TU-F085 | Manufacturer | AMI Semiconductor / ON Semiconductor |
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Description | MOSFET N-CH 250V 25.5A I2PAK | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 21827 pcs | Data sheet | FQI27N25TU-F085.pdf |
Vgs(th) (Max) @ Id | 5V @ 250µA | Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | I2PAK (TO-262) |
Series | Automotive, AEC-Q101 | Rds On (Max) @ Id, Vgs | 110 mOhm @ 12.75A, 10V |
Power Dissipation (Max) | 3.13W (Ta), 417W (Tc) | Packaging | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | Other Names | FQI27N25TU_F085 FQI27N25TU_F085-ND |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V | Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
FET Type | N-Channel | FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Drain to Source Voltage (Vdss) | 250V |
Detailed Description | N-Channel 250V 25.5A (Tc) 3.13W (Ta), 417W (Tc) Through Hole I2PAK (TO-262) | Current - Continuous Drain (Id) @ 25°C | 25.5A (Tc) |
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