Part Number | FQD4P25TM-WS | Manufacturer | AMI Semiconductor / ON Semiconductor |
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Description | MOSFET P-CH 250V 3.1A DPAK | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 95951 pcs | Data sheet | FQD4P25TM-WS.pdf |
Vgs(th) (Max) @ Id | 5V @ 250µA | Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | D-Pak |
Series | QFET® | Rds On (Max) @ Id, Vgs | 2.1 Ohm @ 1.55A, 10V |
Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) | Packaging | Original-Reel® |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | Other Names | FQD4P25TM-WSDKR FQD4P25TM_WSDKR FQD4P25TM_WSDKR-ND |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 9 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V | FET Type | P-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 250V | Detailed Description | P-Channel 250V 3.1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount D-Pak |
Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
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