Part Number | FQD13N06LTM | Manufacturer | AMI Semiconductor / ON Semiconductor |
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Description | MOSFET N-CH 60V 11A DPAK | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 306300 pcs | Data sheet | 1.FQD13N06LTM.pdf2.FQD13N06LTM.pdf |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | D-Pak |
Series | QFET® | Rds On (Max) @ Id, Vgs | 115 mOhm @ 5.5A, 10V |
Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) | Packaging | Tape & Reel (TR) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | Other Names | FQD13N06LTM-ND FQD13N06LTMTR |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 7 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 5V | FET Type | N-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Drain to Source Voltage (Vdss) | 60V | Detailed Description | N-Channel 60V 11A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-Pak |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
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