Part Number | FQB8N90CTM | Manufacturer | AMI Semiconductor / ON Semiconductor |
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Description | MOSFET N-CH 900V 6.3A D2PAK | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 32708 pcs | Data sheet | FQB8N90CTM.pdf |
Vgs(th) (Max) @ Id | 5V @ 250µA | Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | D²PAK (TO-263AB) |
Series | QFET® | Rds On (Max) @ Id, Vgs | 1.9 Ohm @ 3.15A, 10V |
Power Dissipation (Max) | 171W (Tc) | Packaging | Cut Tape (CT) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Other Names | FQB8N90CTMCT |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 11 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 2080pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V | FET Type | N-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 900V | Detailed Description | N-Channel 900V 6.3A (Tc) 171W (Tc) Surface Mount D²PAK (TO-263AB) |
Current - Continuous Drain (Id) @ 25°C | 6.3A (Tc) |
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