FQB7N80TM_AM002

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FQB7N80TM_AM002
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 800V 6.6A D2PAK
Datasheets:	FQB7N80TM_AM002.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	6736 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 6736 pcs

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Specifications of FQB7N80TM_AM002

Part Number	FQB7N80TM_AM002	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 800V 6.6A D2PAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	6736 pcs	Data sheet	FQB7N80TM_AM002.pdf
Vgs(th) (Max) @ Id	5V @ 250µA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	D²PAK (TO-263AB)
Series	QFET®	Rds On (Max) @ Id, Vgs	1.5 Ohm @ 3.3A, 10V
Power Dissipation (Max)	3.13W (Ta), 167W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	1850pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	52nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	800V	Detailed Description	N-Channel 800V 6.6A (Tc) 3.13W (Ta), 167W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C	6.6A (Tc)

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FQB7N80TM_AM002

Product Overview

Specifications of FQB7N80TM_AM002

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