Part Number | FQB4N80TM | Manufacturer | AMI Semiconductor / ON Semiconductor |
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Description | MOSFET N-CH 800V 3.9A D2PAK | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 102940 pcs | Data sheet | FQB4N80TM.pdf |
Vgs(th) (Max) @ Id | 5V @ 250µA | Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | D²PAK (TO-263AB) |
Series | QFET® | Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 1.95A, 10V |
Power Dissipation (Max) | 3.13W (Ta), 130W (Tc) | Packaging | Tape & Reel (TR) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Other Names | FQB4N80TM-ND FQB4N80TMTR |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 10 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V | FET Type | N-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 800V | Detailed Description | N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263AB) |
Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
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