FDP4D5N10C

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FDP4D5N10C
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	FET ENGR DEV-NOT REL
Datasheets:	FDP4D5N10C.pdf
Stock Condition	26380 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 26380 pcs

Reference Price (In US Dollars)

800 pcs: $1.499

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Specifications of FDP4D5N10C

Part Number	FDP4D5N10C	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	FET ENGR DEV-NOT REL	Lead Free Status / RoHS Status
Quantity Available	26380 pcs	Data sheet	FDP4D5N10C.pdf
Vgs(th) (Max) @ Id	4V @ 310µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-220-3
Series	PowerTrench®	Rds On (Max) @ Id, Vgs	4.5 mOhm @ 100A, 10V
Power Dissipation (Max)	2.4W (Ta), 150W (Tc)	Package / Case	TO-220-3
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Manufacturer Standard Lead Time	32 Weeks	Lead Free Status	Lead free
Input Capacitance (Ciss) (Max) @ Vds	5065pF @ 50V	Gate Charge (Qg) (Max) @ Vgs	68nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	100V
Detailed Description	N-Channel 100V 128A (Tc) 2.4W (Ta), 150W (Tc) Through Hole TO-220-3	Current - Continuous Drain (Id) @ 25°C	128A (Tc)

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FDP4D5N10C

Product Overview

Reference Price (In US Dollars)

Specifications of FDP4D5N10C

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