FDP027N08B-F102

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FDP027N08B-F102
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 80V 120A TO-220-3
Datasheets:	FDP027N08B-F102.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	29785 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 29785 pcs

Reference Price (In US Dollars)

1 pcs: $1.322

10 pcs: $1.18

100 pcs: $0.968

800 pcs: $0.708

1600 pcs: $0.661

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Specifications of FDP027N08B-F102

Part Number	FDP027N08B-F102	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 80V 120A TO-220-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	29785 pcs	Data sheet	FDP027N08B-F102.pdf
Vgs(th) (Max) @ Id	4.5V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-220-3
Series	PowerTrench®	Rds On (Max) @ Id, Vgs	2.7 mOhm @ 100A, 10V
Power Dissipation (Max)	246W (Tc)	Packaging	Tube
Package / Case	TO-220-3	Other Names	FDP027N08B_F102 FDP027N08B_F102-ND
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	39 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	13530pF @ 40V
Gate Charge (Qg) (Max) @ Vgs	178nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	80V	Detailed Description	N-Channel 80V 120A (Tc) 246W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C	120A (Tc)

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FDP027N08B-F102

Product Overview

Reference Price (In US Dollars)

Specifications of FDP027N08B-F102

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