FDI047AN08A0

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FDI047AN08A0
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 75V 80A TO-262AB
Datasheets:	FDI047AN08A0.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	4675 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 4675 pcs

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Specifications of FDI047AN08A0

Part Number	FDI047AN08A0	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 75V 80A TO-262AB	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4675 pcs	Data sheet	FDI047AN08A0.pdf
Vgs(th) (Max) @ Id	4V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	I2PAK (TO-262)
Series	PowerTrench®	Rds On (Max) @ Id, Vgs	4.7 mOhm @ 80A, 10V
Power Dissipation (Max)	310W (Tc)	Packaging	Tube
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	6600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	138nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Drain to Source Voltage (Vdss)	75V	Detailed Description	N-Channel 75V 80A (Tc) 310W (Tc) Through Hole I2PAK (TO-262)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)

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FDI047AN08A0

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