FDFMA2P859T

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FDFMA2P859T
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET P-CH 20V 3A MICROFET
Datasheets:	FDFMA2P859T.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	4660 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 4660 pcs

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Specifications of FDFMA2P859T

Part Number	FDFMA2P859T	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET P-CH 20V 3A MICROFET	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4660 pcs	Data sheet	FDFMA2P859T.pdf
Vgs(th) (Max) @ Id	1.3V @ 250µA	Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	MicroFET 2x2 Thin
Series	PowerTrench®	Rds On (Max) @ Id, Vgs	120 mOhm @ 3A, 4.5V
Power Dissipation (Max)	1.4W (Ta)	Packaging	Tape & Reel (TR)
Package / Case	6-UDFN Exposed Pad	Other Names	FDFMA2P859TTR
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	435pF @ 10V	Gate Charge (Qg) (Max) @ Vgs	6nC @ 4.5V
FET Type	P-Channel	FET Feature	Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V	Drain to Source Voltage (Vdss)	20V
Detailed Description	P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount MicroFET 2x2 Thin	Current - Continuous Drain (Id) @ 25°C	3A (Ta)

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FDFMA2P859T

Product Overview

Specifications of FDFMA2P859T

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