FDD86367

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FDD86367
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CHANNEL 80V 100A TO252
Datasheets:	FDD86367.pdf
Stock Condition	38755 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 38755 pcs

Reference Price (In US Dollars)

1 pcs: $0.889

10 pcs: $0.802

100 pcs: $0.645

500 pcs: $0.502

1000 pcs: $0.416

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Specifications of FDD86367

Part Number	FDD86367	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CHANNEL 80V 100A TO252	Lead Free Status / RoHS Status
Quantity Available	38755 pcs	Data sheet	FDD86367.pdf
Vgs(th) (Max) @ Id	4V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-252, (D-Pak)
Series	Automotive, AEC-Q101, PowerTrench®	Rds On (Max) @ Id, Vgs	4.2 mOhm @ 80A, 10V
Power Dissipation (Max)	227W (Tj)	Packaging	Cut Tape (CT)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	Other Names	FDD86367OSCT
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	16 Weeks
Input Capacitance (Ciss) (Max) @ Vds	4840pF @ 40V	Gate Charge (Qg) (Max) @ Vgs	88nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	80V
Detailed Description	N-Channel 80V 100A (Tc) 227W (Tj) Surface Mount TO-252, (D-Pak)	Current - Continuous Drain (Id) @ 25°C	100A (Tc)

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FDD86367

Product Overview

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Specifications of FDD86367

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