FDD8586

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FDD8586
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 20V 35A DPAK
Datasheets:	FDD8586.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	5452 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 5452 pcs

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Specifications of FDD8586

Part Number	FDD8586	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 20V 35A DPAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5452 pcs	Data sheet	FDD8586.pdf
Vgs(th) (Max) @ Id	2.5V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-252AA
Series	PowerTrench®	Rds On (Max) @ Id, Vgs	5.5 mOhm @ 35A, 10V
Power Dissipation (Max)	77W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	Other Names	FDD8586TR
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	2480pF @ 10V	Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Drain to Source Voltage (Vdss)	20V
Detailed Description	N-Channel 20V 35A (Tc) 77W (Tc) Surface Mount TO-252AA	Current - Continuous Drain (Id) @ 25°C	35A (Tc)

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FDD8586

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