FCU2250N80Z

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FCU2250N80Z
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 800V 2.6A IPAK
Datasheets:	FCU2250N80Z.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	63378 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 63378 pcs

Reference Price (In US Dollars)

1 pcs: $0.625

10 pcs: $0.554

100 pcs: $0.438

500 pcs: $0.339

1000 pcs: $0.268

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Specifications of FCU2250N80Z

Part Number	FCU2250N80Z	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 800V 2.6A IPAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	63378 pcs	Data sheet	FCU2250N80Z.pdf
Vgs(th) (Max) @ Id	4.5V @ 260µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	I-PAK
Series	SuperFET® II	Rds On (Max) @ Id, Vgs	2.25 Ohm @ 1.3A, 10V
Power Dissipation (Max)	39W (Tc)	Packaging	Tube
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	585pF @ 100V
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	800V	Detailed Description	N-Channel 800V 2.6A (Tc) 39W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C	2.6A (Tc)

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FCU2250N80Z

Product Overview

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Specifications of FCU2250N80Z

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