FCI25N60N-F102

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FCI25N60N-F102
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 600V 25A I2PAK
Datasheets:	FCI25N60N-F102.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	11429 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 11429 pcs

Reference Price (In US Dollars)

1 pcs: $2.814

10 pcs: $2.514

100 pcs: $2.061

500 pcs: $1.669

1000 pcs: $1.407

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Specifications of FCI25N60N-F102

Part Number	FCI25N60N-F102	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 600V 25A I2PAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	11429 pcs	Data sheet	FCI25N60N-F102.pdf
Vgs(th) (Max) @ Id	4V @ 250µA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	I2PAK (TO-262)
Series	SupreMOS™	Rds On (Max) @ Id, Vgs	125 mOhm @ 12.5A, 10V
Power Dissipation (Max)	216W (Tc)	Packaging	Tube
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA	Other Names	FCI25N60N_F102 FCI25N60N_F102-ND
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	3352pF @ 100V	Gate Charge (Qg) (Max) @ Vgs	74nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	600V
Detailed Description	N-Channel 600V 25A (Tc) 216W (Tc) Through Hole I2PAK (TO-262)	Current - Continuous Drain (Id) @ 25°C	25A (Tc)

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FCI25N60N-F102

Product Overview

Reference Price (In US Dollars)

Specifications of FCI25N60N-F102

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AFTER-SALES GUARANTEE

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