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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single, Pre-BiasedRN2130MFV,L3F

RN2130MFV,L3F

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Image may be representation. See specifications for product details.

Product Overview

Part Number: RN2130MFV,L3F
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description X34 PB-F VESM TRANSISTOR PD 150M
Datasheets: RN2130MFV,L3F.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 2784571 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 2784571 pcs
Reference Price (In US Dollars)
8000 pcs
$0.011
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Specifications of RN2130MFV,L3F

Part Number RN2130MFV,L3F Manufacturer Toshiba Semiconductor and Storage
Description X34 PB-F VESM TRANSISTOR PD 150M Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 2784571 pcs Data sheet RN2130MFV,L3F.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Transistor Type PNP - Pre-Biased Supplier Device Package VESM
Series - Resistor - Emitter Base (R2) 100 kOhms
Resistor - Base (R1) 100 kOhms Power - Max 150mW
Package / Case SOT-723 Other Names RN2130MFVL3F
Mounting Type Surface Mount Manufacturer Standard Lead Time 16 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

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