UnitedSiC introduces Kelvin contact silicon carbide mosfets
Available in 650V and 1.2kV versions, they come in a TO-247-4L package.
“The Kelvin package avoids gate ringing and false triggering which would otherwise require slowing of switching speeds to manage the large common source inductance of three-leaded packages,” said the firm, which added that the packages operate up to 175°C.
Applications are foreseen in totem pole PFC stages, LLC and phase-shifted full bridge converters – within EV chargers, telecoms power and servers.
The devices within are cascode pairs – with gate-drive going to a low-voltage silicon mosfet, which controls a depletion-mode high-voltage silicon carbide fet.
“Compared with other wide band-gap technologies, the SiC cascode devices offer standard 12V gate drive, and have 100% production tested avalanche ratings,” said UltraSiC.
The range includes:
- UF3C120040K4S (1.2kV 40mΩ)
- UF3C120080K4S (1.2kV 80mΩ)
- UF3C065030K4S (650V 30mΩ)
- UF3C065040K4S (650V 40mΩ)
- UF3C065080K4S (650V 80mΩ)