Dual 100V mosfet is AEC-Q101 qualified

Made on the firm’s U-MOSⅧ-H process and AEC-Q101 qualified, it is called SSM6N813R.

Each transistor in the package has a maximum current of 3.5A (subject to junction temperature) and maximum drain-source voltage of 100V – a voltage rating that suites them to driving long series strings of LEDs, according to the firm.

Maximum on-resistance is 112mΩmax (10V on gate) or 154mΩ (4.5Vg), while typical figures are 88mΩ at 10Vg and 10mΩ(typ) at 4.5Vg – max figures are measured at 2A and typical at 3.5A.

Protection diodes and resistors are provided at the gates – protection is up to ±20V.

Single-pulse avalanche is 7.6mJ max.

Packaging is TSOP6F, which is 2.9 x 2.8 x 0.8mm – similar to a SOT23 – and can handle 1.5W of heat (total, both transistors) providing the channels stay below 175°C.